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Produits Toshiba Semiconductor and Storage - Transistors - FET, MOSFET - Simples

Dossiers 1 075
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Image
Référence
Fabricant
Description
paquet
Stock
Quantité
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SSM3K36MFV,L3F
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 500MA VESM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VESM
  • Package / Case: SOT-723
paquet: SOT-723
Stock568 950
MOSFET (Metal Oxide)
20V
500mA (Ta)
1.5V, 5V
1V @ 1mA
1.23nC @ 4V
46pF @ 10V
±10V
-
150mW (Ta)
630 mOhm @ 200mA, 5V
150°C (TJ)
Surface Mount
VESM
SOT-723
TJ90S04M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 90A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock19 155
MOSFET (Metal Oxide)
40 V
90A (Ta)
4.5V, 10V
2V @ 1mA
172 nC @ 10 V
7700 pF @ 10 V
+10V, -20V
-
180W (Tc)
4.3mOhm @ 45A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH9R00CQ5-LQ
Toshiba Semiconductor and Storage

150V U-MOS X-H SOP-ADVANCE(N) 9M

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock11 265
MOSFET (Metal Oxide)
150 V
64A (Tc)
8V, 10V
4.5V @ 1mA
44 nC @ 10 V
5400 pF @ 75 V
±20V
-
210W (Tc)
9mOhm @ 32A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
SSM6K819R-LF
Toshiba Semiconductor and Storage

N-CH MOSFET, 100 V, 10 A, 0.0258

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
paquet: -
Stock459
MOSFET (Metal Oxide)
100 V
10A (Ta)
4.5V, 10V
2.5V @ 100µA
8.5 nC @ 4.5 V
1110 pF @ 15 V
±20V
-
1.5W (Ta)
25.8mOhm @ 4A, 10V
175°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
TPH6R30ANL-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 66A/45A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 54W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock33 678
MOSFET (Metal Oxide)
100 V
66A (Ta), 45A (Tc)
4.5V, 10V
2.5V @ 500µA
55 nC @ 10 V
4300 pF @ 50 V
±20V
-
2.5W (Ta), 54W (Tc)
6.3mOhm @ 22.5A, 10V
150°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK090N65Z-S1F
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.27mA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
paquet: -
Stock81
MOSFET (Metal Oxide)
650 V
30A (Ta)
10V
4V @ 1.27mA
47 nC @ 10 V
2780 pF @ 300 V
±30V
-
230W (Tc)
90mOhm @ 15A, 10V
150°C
Through Hole
TO-247
TO-247-3
XPQR3004PB-LXHQ
Toshiba Semiconductor and Storage

40V U-MOS IX-H L-TOGL 0.3MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 750W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: L-TOGL™
  • Package / Case: 8-PowerBSFN
paquet: -
Stock13 275
MOSFET (Metal Oxide)
40 V
400A (Ta)
6V, 10V
3V @ 1mA
295 nC @ 10 V
26910 pF @ 10 V
±20V
-
750W (Tc)
0.3mOhm @ 200A, 10V
175°C
Surface Mount
L-TOGL™
8-PowerBSFN
TK3R3A06PL-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Request a Quote
MOSFET (Metal Oxide)
60 V
80A (Tc)
4.5V, 10V
2.5V @ 700µA
71 nC @ 10 V
5000 pF @ 30 V
±20V
-
42W (Tc)
3.3mOhm @ 40A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TPN1200APL-L1Q
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 630mW (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock17 007
MOSFET (Metal Oxide)
100 V
40A (Tc)
4.5V, 10V
2.5V @ 300µA
24 nC @ 10 V
1855 pF @ 50 V
±20V
-
630mW (Ta), 104W (Tc)
11.5mOhm @ 20A, 10V
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
TJ60S06M3L-LXHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 60V 60A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7760 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock2 115
MOSFET (Metal Oxide)
60 V
60A (Ta)
6V, 10V
3V @ 1mA
156 nC @ 10 V
7760 pF @ 10 V
+10V, -20V
-
100W (Tc)
11.2mOhm @ 30A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK370A60F-S4X-S
Toshiba Semiconductor and Storage

MOSFET N-CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.04mA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Request a Quote
MOSFET (Metal Oxide)
600 V
15A (Ta)
10V
4V @ 2.04mA
55 nC @ 10 V
2200 pF @ 300 V
±30V
-
45W (Tc)
370mOhm @ 7.5A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3J374R-LXHF
Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-30V VGSS:-20/+10

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: -
Stock26 097
MOSFET (Metal Oxide)
30 V
4A (Ta)
4V, 10V
2V @ 100µA
5.9 nC @ 10 V
280 pF @ 15 V
+10V, -20V
-
1W (Ta)
71mOhm @ 3A, 10V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TPH2R805PL-LQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5175 pF @ 22.5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 116W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock8 940
MOSFET (Metal Oxide)
45 V
100A (Tc)
4.5V, 10V
2.4V @ 500µA
73 nC @ 10 V
5175 pF @ 22.5 V
±20V
-
830mW (Ta), 116W (Tc)
2.8mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK5R1A08QM-S4X
Toshiba Semiconductor and Storage

UMOS10 TO-220SIS 80V 5.1MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock198
MOSFET (Metal Oxide)
80 V
70A (Tc)
6V, 10V
3.5V @ 700µA
54 nC @ 10 V
3980 pF @ 40 V
±20V
-
45W (Tc)
5.1mOhm @ 35A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TW140N120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 140M

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 691 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 182mOhm @ 10A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
paquet: -
Stock153
SiCFET (Silicon Carbide)
1200 V
20A (Tc)
18V
5V @ 1mA
24 nC @ 18 V
691 pF @ 800 V
+25V, -10V
-
107W (Tc)
182mOhm @ 10A, 18V
175°C
Through Hole
TO-247
TO-247-3
SSM3K72KFS-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 300MA SSM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSM
  • Package / Case: SC-75, SOT-416
paquet: -
Stock407 643
MOSFET (Metal Oxide)
60 V
300mA (Ta)
4.5V, 10V
2.1V @ 250µA
0.6 nC @ 4.5 V
40 pF @ 10 V
±20V
-
150mW (Ta)
1.5Ohm @ 100mA, 10V
150°C
Surface Mount
SSM
SC-75, SOT-416
SSM6K810R-LF
Toshiba Semiconductor and Storage

SMALL SIGNAL MOSFET N-CH VDSS=10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
paquet: -
Stock17 862
MOSFET (Metal Oxide)
100 V
3.5A (Ta)
4.5V, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
430 pF @ 15 V
±20V
-
1.5W (Ta)
69mOhm @ 2A, 10V
175°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
TK110A10PL-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 18A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock207
MOSFET (Metal Oxide)
100 V
36A (Tc)
4.5V, 10V
2.5V @ 300µA
33 nC @ 10 V
2040 pF @ 50 V
±20V
-
36W (Tc)
10.8mOhm @ 18A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3J134TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 3.2A UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: -
Stock7 311
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.5V, 4.5V
1V @ 1mA
4.7 nC @ 4.5 V
290 pF @ 10 V
±8V
-
500mW (Ta)
93mOhm @ 1.5A, 4.5V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
XPN7R104NC-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 20A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 840mW (Ta), 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock12 150
MOSFET (Metal Oxide)
40 V
20A (Ta)
4.5V, 10V
2.5V @ 200µA
21 nC @ 10 V
1290 pF @ 10 V
±20V
-
840mW (Ta), 65W (Tc)
7.1mOhm @ 10A, 10V
175°C
Surface Mount
8-TSON Advance-WF (3.1x3.1)
8-PowerVDFN
TK160F10N1-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
Stock13 491
MOSFET (Metal Oxide)
100 V
160A (Ta)
10V
4V @ 1mA
121 nC @ 10 V
8510 pF @ 10 V
±20V
-
375W (Tc)
2.4mOhm @ 80A, 10V
175°C
Surface Mount
TO-220SM(W)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TK8R2E06PL-S1X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
Stock132
MOSFET (Metal Oxide)
60 V
50A (Tc)
4.5V, 10V
2.5V @ 300µA
28 nC @ 10 V
1990 pF @ 30 V
±20V
-
81W (Tc)
8.2mOhm @ 25A, 10V
175°C
Through Hole
TO-220
TO-220-3
TK22A65X5-S5X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock384
MOSFET (Metal Oxide)
650 V
22A (Ta)
10V
4.5V @ 1.1mA
50 nC @ 10 V
2400 pF @ 300 V
±30V
-
45W (Tc)
160mOhm @ 11A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK60S10N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 60A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock5 991
MOSFET (Metal Oxide)
100 V
60A (Ta)
6V, 10V
3.5V @ 500µA
60 nC @ 10 V
4320 pF @ 10 V
±20V
-
180W (Tc)
6.11mOhm @ 30A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK3R3E08QM-S1X
Toshiba Semiconductor and Storage

UMOS10 TO-220AB 80V 3.3MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
Stock489
MOSFET (Metal Oxide)
80 V
120A (Tc)
6V, 10V
3.5V @ 1.3mA
110 nC @ 10 V
7670 pF @ 40 V
±20V
-
230W (Tc)
3.3mOhm @ 50A, 10V
175°C
Through Hole
TO-220
TO-220-3
TK099V65Z-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 30A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.27mA
  • Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (8x8)
  • Package / Case: 4-VSFN Exposed Pad
paquet: -
Stock44 424
MOSFET (Metal Oxide)
650 V
30A (Ta)
10V
4V @ 1.27mA
47 nC @ 10 V
2780 pF @ 300 V
±30V
-
230W (Tc)
99mOhm @ 15A, 10V
150°C
Surface Mount
5-DFN (8x8)
4-VSFN Exposed Pad
TK5P60W5-RVQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 230µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock6 000
MOSFET (Metal Oxide)
600 V
4.5A (Ta)
10V
4.5V @ 230µA
11.5 nC @ 10 V
370 pF @ 300 V
±30V
-
60W (Tc)
990mOhm @ 2.3A, 10V
150°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK65S04N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 65A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock8 544
MOSFET (Metal Oxide)
40 V
65A (Ta)
4.5V, 10V
2.5V @ 300µA
39 nC @ 10 V
2550 pF @ 10 V
±20V
-
107W (Tc)
4.3mOhm @ 32.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
SSM3J378R-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A SOT23F

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: -
Stock42 024
MOSFET (Metal Oxide)
20 V
6A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
840 pF @ 10 V
+6V, -8V
-
1W (Ta)
29.8mOhm @ 3A, 4.5V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
SSM3K341TU-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET NCH 60V 6A SOT323F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: -
Stock33 078
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
2.5V @ 100µA
9.3 nC @ 10 V
550 pF @ 10 V
±20V
-
1W (Ta)
36mOhm @ 4A, 10V
175°C
Surface Mount
UFM
3-SMD, Flat Leads