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Produits Toshiba Semiconductor and Storage - Transistors - FET, MOSFET - Simples

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Description
paquet
Stock
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TW083Z65C-S1F
Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247-4L 83

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 111W (Tc)
  • Rds On (Max) @ Id, Vgs: 118mOhm @ 15A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
paquet: -
Stock360
SiC (Silicon Carbide Junction Transistor)
650 V
30A (Tc)
18V
5V @ 600µA
28 nC @ 18 V
873 pF @ 400 V
+25V, -10V
-
111W (Tc)
118mOhm @ 15A, 18V
175°C
Through Hole
TO-247-4L(X)
TO-247-4
TK11S10N1L-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 11A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock5 382
MOSFET (Metal Oxide)
100 V
11A (Ta)
4.5V, 10V
2.5V @ 100µA
15 nC @ 10 V
850 pF @ 10 V
±20V
-
65W (Tc)
28mOhm @ 5.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK12J60W-S1VE-S
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11.5A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 600µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)
  • Package / Case: TO-3P-3, SC-65-3
paquet: -
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MOSFET (Metal Oxide)
600 V
11.5A (Ta)
10V
3.7V @ 600µA
25 nC @ 10 V
890 pF @ 300 V
±30V
-
110W (Tc)
300mOhm @ 5.8A, 10V
150°C
Through Hole
TO-3P(N)
TO-3P-3, SC-65-3
XPN6R706NC-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 840mW (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock87 855
MOSFET (Metal Oxide)
60 V
40A (Ta)
4.5V, 10V
2.5V @ 300µA
35 nC @ 10 V
2000 pF @ 10 V
±20V
-
840mW (Ta), 100W (Tc)
6.7mOhm @ 20A, 10V
175°C
Surface Mount
8-TSON Advance-WF (3.1x3.1)
8-PowerVDFN
TK10E80W-S1X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 450µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 300 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 4.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
Stock150
MOSFET (Metal Oxide)
800 V
9.5A (Ta)
10V
4V @ 450µA
19 nC @ 10 V
1150 pF @ 300 V
±20V
-
130W (Tc)
550mOhm @ 4.8A, 10V
150°C
Through Hole
TO-220
TO-220-3
SSM3K15F-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA S-MINI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7.8 pF @ 3 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3
paquet: -
Stock97 344
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
1.5V @ 100µA
-
7.8 pF @ 3 V
±20V
-
200mW (Ta)
4Ohm @ 10mA, 4V
150°C
Surface Mount
S-Mini
TO-236-3, SC-59, SOT-23-3
TK2P60D-TE16L1-NV
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 2A PW-MOLD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3Ohm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PW-MOLD
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
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MOSFET (Metal Oxide)
600 V
2A (Ta)
10V
4.4V @ 1mA
7 nC @ 10 V
280 pF @ 25 V
±30V
-
60W (Tc)
4.3Ohm @ 1A, 10V
150°C
Surface Mount
PW-MOLD
TO-252-3, DPAK (2 Leads + Tab), SC-63
TPH2R104PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 100A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6230 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830mW (Ta), 116W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock35 247
MOSFET (Metal Oxide)
40 V
100A (Tc)
4.5V, 10V
2.4V @ 500µA
78 nC @ 10 V
6230 pF @ 20 V
±20V
-
830mW (Ta), 116W (Tc)
2.1mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
SSM6K517NU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 6A 6UDFNB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 15 V
  • Vgs (Max): +12V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
paquet: -
Stock20 412
MOSFET (Metal Oxide)
30 V
6A (Ta)
1.8V, 4.5V
1V @ 1mA
3.2 nC @ 4.5 V
310 pF @ 15 V
+12V, -8V
-
1.25W (Ta)
39.1mOhm @ 2A, 4.5V
150°C
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
SSM6K204FE-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 2A ES6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: ES6
  • Package / Case: SOT-563, SOT-666
paquet: -
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MOSFET (Metal Oxide)
20 V
2A (Ta)
1.5V, 4V
1V @ 1mA
3.4 nC @ 10 V
195 pF @ 10 V
±10V
-
500mW (Ta)
126mOhm @ 1A, 4V
150°C
Surface Mount
ES6
SOT-563, SOT-666
TK60F10N1L-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 60A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 205W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
Stock5 250
MOSFET (Metal Oxide)
100 V
60A (Ta)
6V, 10V
3.5V @ 500µA
60 nC @ 10 V
4320 pF @ 10 V
±20V
-
205W (Tc)
6.11mOhm @ 30A, 10V
175°C
Surface Mount
TO-220SM(W)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SSM10N954L-EFF
Toshiba Semiconductor and Storage

COMMON-DRAIN NCH MOSFET, 12V, 13

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TCSPAC-153001
  • Package / Case: 10-SMD, No Lead
paquet: -
Stock30 000
MOSFET (Metal Oxide)
12 V
13.5A (Ta)
2.5V, 4.5V
1.4V @ 1.11mA
25 nC @ 4 V
-
±8V
-
800mW (Ta)
2.75mOhm @ 6A, 4.5V
150°C
Surface Mount
TCSPAC-153001
10-SMD, No Lead
TW048N65C-S1F
Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 48MOH

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1362 pF @ 400 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 20A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
paquet: -
Stock108
SiCFET (Silicon Carbide)
650 V
40A (Tc)
18V
5V @ 1.6mA
41 nC @ 18 V
1362 pF @ 400 V
+25V, -10V
-
132W (Tc)
65mOhm @ 20A, 18V
175°C
Through Hole
TO-247
TO-247-3
SSM6K361NU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 3.5A 6UDFNB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
paquet: -
Stock114 423
MOSFET (Metal Oxide)
100 V
3.5A (Ta)
4.5V, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
430 pF @ 15 V
±20V
-
1.25W (Ta)
69mOhm @ 2A, 10V
150°C
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
TK28V65W5-LQ
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.6mA
  • Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 13.8A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
paquet: -
Stock14 685
MOSFET (Metal Oxide)
650 V
27.6A (Ta)
10V
4.5V @ 1.6mA
90 nC @ 10 V
3000 pF @ 300 V
±30V
-
240W (Tc)
140mOhm @ 13.8A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
TPN2R903PL-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 70A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 630mW (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock112 338
MOSFET (Metal Oxide)
30 V
70A (Tc)
4.5V, 10V
2.1V @ 200µA
26 nC @ 10 V
2300 pF @ 15 V
±20V
-
630mW (Ta), 75W (Tc)
2.9mOhm @ 35A, 10V
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
TK11S10N1L-LXHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 11A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 5.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock11 667
MOSFET (Metal Oxide)
100 V
11A (Ta)
4.5V, 10V
2.5V @ 100µA
15 nC @ 10 V
850 pF @ 10 V
±20V
-
65W (Tc)
28mOhm @ 5.5A, 10V
175°C
Surface Mount
DPAK+
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK160F10N1L-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-220SM(W)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
Stock26 400
MOSFET (Metal Oxide)
100 V
160A (Ta)
6V, 10V
3.5V @ 1mA
122 nC @ 10 V
10100 pF @ 10 V
±20V
-
375W (Tc)
2.4mOhm @ 80A, 10V
175°C
Surface Mount
TO-220SM(W)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TK5R3A06PL-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 28A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock180
MOSFET (Metal Oxide)
60 V
56A (Tc)
4.5V, 10V
2.5V @ 300µA
36 nC @ 10 V
2380 pF @ 30 V
±20V
-
36W (Tc)
5.3mOhm @ 28A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK4R4P06PL-RQ
Toshiba Semiconductor and Storage

MOSFET N-CHANNEL 60V 58A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 48.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 29A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock10 155
MOSFET (Metal Oxide)
60 V
58A (Tc)
4.5V, 10V
2.5V @ 500µA
48.2 nC @ 10 V
3280 pF @ 30 V
±20V
-
87W (Tc)
4.4mOhm @ 29A, 10V
175°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
SSM6K809R-LXHF
Toshiba Semiconductor and Storage

AUTO AEC-Q SS MOS N-CH LOGIC-LEV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
paquet: -
Stock19 638
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
2.5V @ 100µA
9.3 nC @ 10 V
550 pF @ 10 V
±20V
-
1.5W (Ta)
36mOhm @ 5A, 10V
175°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
SSM3K48FU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100MA USM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15.1 pF @ 3 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: USM
  • Package / Case: SC-70, SOT-323
paquet: -
Stock66 519
MOSFET (Metal Oxide)
30 V
100mA (Ta)
2.5V, 4V
1.5V @ 100µA
-
15.1 pF @ 3 V
±20V
-
150mW (Ta)
3.2Ohm @ 10mA, 4V
150°C
Surface Mount
USM
SC-70, SOT-323
SSM6J402TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2A UF6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 117mOhm @ 1A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
paquet: -
Stock18 570
MOSFET (Metal Oxide)
30 V
2A (Ta)
4V, 10V
2.6V @ 1mA
5.3 nC @ 10 V
280 pF @ 15 V
±20V
-
500mW (Ta)
117mOhm @ 1A, 10V
150°C
Surface Mount
UF6
6-SMD, Flat Leads
TW015Z120C-S1F
Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247-4L 1

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5V @ 11.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 800 V
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 431W (Tc)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 18V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(X)
  • Package / Case: TO-247-4
paquet: -
Stock360
SiC (Silicon Carbide Junction Transistor)
1200 V
100A (Tc)
18V
5V @ 11.7mA
158 nC @ 18 V
6000 pF @ 800 V
+25V, -10V
-
431W (Tc)
21mOhm @ 50A, 18V
175°C
Through Hole
TO-247-4L(X)
TO-247-4
TK650A60F-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.16mA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock264
MOSFET (Metal Oxide)
600 V
11A (Ta)
10V
4V @ 1.16mA
34 nC @ 10 V
1320 pF @ 300 V
±30V
-
45W (Tc)
650mOhm @ 5.5A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK1K9A60F-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.7A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9Ohm @ 1.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Request a Quote
MOSFET (Metal Oxide)
600 V
3.7A (Ta)
10V
4V @ 400µA
14 nC @ 10 V
490 pF @ 300 V
±30V
-
30W (Tc)
1.9Ohm @ 1.9A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM6K804R-LF
Toshiba Semiconductor and Storage

N-CH MOSFET 40V, +/-20V, 12A ,0.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 4A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
paquet: -
Stock17 010
MOSFET (Metal Oxide)
40 V
12A (Ta)
4.5V, 10V
2.4V @ 100µA
7.5 nC @ 4.5 V
1110 pF @ 20 V
±20V
-
1.5W (Ta)
12mOhm @ 4A, 10V
175°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
TK5R3E08QM-S1X
Toshiba Semiconductor and Storage

UMOS10 TO-220AB 80V 5.3MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
Stock153
MOSFET (Metal Oxide)
80 V
120A (Tc)
6V, 10V
3.5V @ 700µA
55 nC @ 10 V
3980 pF @ 40 V
±20V
-
150W (Tc)
5.3mOhm @ 50A, 10V
175°C
Through Hole
TO-220
TO-220-3
TK3R9E10PL-S1X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
paquet: -
Stock27
MOSFET (Metal Oxide)
100 V
100A (Tc)
4.5V, 10V
2.5V @ 1mA
96 nC @ 10 V
6320 pF @ 50 V
±20V
-
230W (Tc)
3.9mOhm @ 50A, 10V
175°C
Through Hole
TO-220
TO-220-3
SSM3J64CTC-L3F
Toshiba Semiconductor and Storage

MOSFET P-CH 12V 1A CST3C

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 370mOhm @ 600mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3C
  • Package / Case: SC-101, SOT-883
paquet: -
Stock59 319
MOSFET (Metal Oxide)
12 V
1A (Ta)
1.2V, 4.5V
1V @ 1mA
-
50 pF @ 10 V
±10V
-
500mW (Ta)
370mOhm @ 600mA, 4.5V
150°C
Surface Mount
CST3C
SC-101, SOT-883