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Produits Toshiba Semiconductor and Storage - Transistors - FET, MOSFET - Simples

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paquet
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TK155A65Z-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 18A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
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MOSFET (Metal Oxide)
650 V
18A (Ta)
10V
4V @ 730µA
29 nC @ 10 V
1635 pF @ 300 V
±30V
-
40W (Tc)
155mOhm @ 9A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TPH2R408QM-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 80V 120A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 210W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.43mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock94 530
MOSFET (Metal Oxide)
80 V
120A (Tc)
6V, 10V
3.5V @ 1mA
87 nC @ 10 V
8300 pF @ 40 V
±20V
-
3W (Ta), 210W (Tc)
2.43mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TPW1500CNH-L1Q
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DSO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 142W (Tc)
  • Rds On (Max) @ Id, Vgs: 15.4mOhm @ 19A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerWDFN
paquet: -
Stock23 313
MOSFET (Metal Oxide)
150 V
38A (Tc)
10V
4V @ 1mA
22 nC @ 10 V
2200 pF @ 75 V
±20V
-
800mW (Ta), 142W (Tc)
15.4mOhm @ 19A, 10V
150°C
Surface Mount
8-DSOP Advance
8-PowerWDFN
TK1K2A60F-S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 6A TO220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
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MOSFET (Metal Oxide)
600 V
6A (Ta)
10V
4V @ 630µA
21 nC @ 10 V
740 pF @ 300 V
±30V
-
35W (Tc)
1.2Ohm @ 3A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK210V65Z-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 15A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 610µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
paquet: -
Stock13 899
MOSFET (Metal Oxide)
650 V
15A (Ta)
10V
4V @ 610µA
25 nC @ 10 V
1370 pF @ 300 V
±30V
-
130W (Tc)
210mOhm @ 7.5A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
SSM6J503NU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A 6UDFNB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 32.4mOhm @ 3A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFNB (2x2)
  • Package / Case: 6-WDFN Exposed Pad
paquet: -
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MOSFET (Metal Oxide)
20 V
6A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8 nC @ 10 V
840 pF @ 10 V
±8V
-
1W (Ta)
32.4mOhm @ 3A, 4.5V
150°C (TJ)
Surface Mount
6-UDFNB (2x2)
6-WDFN Exposed Pad
TK3R2A08QM-S4X
Toshiba Semiconductor and Storage

UMOS10 TO-220SIS 80V 3.2MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2mOhm @ 46A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
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MOSFET (Metal Oxide)
80 V
92A (Tc)
6V, 10V
3.5V @ 1.3mA
102 nC @ 10 V
7670 pF @ 40 V
±20V
-
45W (Tc)
3.2mOhm @ 46A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM6K819R-LXHF
Toshiba Semiconductor and Storage

AUTO AEC-Q SS MOS N-CH LOGIC-LEV

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP-F
  • Package / Case: 6-SMD, Flat Leads
paquet: -
Stock22 260
MOSFET (Metal Oxide)
100 V
10A (Ta)
4.5V, 10V
2.5V @ 100µA
8.5 nC @ 4.5 V
1110 pF @ 15 V
±20V
-
1.5W (Ta)
25.8mOhm @ 4A, 10V
175°C
Surface Mount
6-TSOP-F
6-SMD, Flat Leads
TPN7R006PL-L1Q
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 54A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 630mW (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock16 596
MOSFET (Metal Oxide)
60 V
54A (Tc)
4.5V, 10V
2.5V @ 200µA
20 nC @ 10 V
1875 pF @ 30 V
±20V
-
630mW (Ta), 75W (Tc)
7mOhm @ 27A, 10V
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
SSM3K16FS-LF
Toshiba Semiconductor and Storage

SMALL LOW ON RESISTANCE NCH MOSF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SSM
  • Package / Case: SC-75, SOT-416
paquet: -
Stock8 940
MOSFET (Metal Oxide)
20 V
100mA (Ta)
1.5V, 4V
1.1V @ 100µA
-
9.3 pF @ 3 V
±10V
-
100mW (Ta)
3Ohm @ 10mA, 4V
150°C
Surface Mount
SSM
SC-75, SOT-416
SSM6K405TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 2A UF6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4 V
  • Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads
paquet: -
Stock7 470
MOSFET (Metal Oxide)
20 V
2A (Ta)
1.5V, 4V
1V @ 1mA
3.4 nC @ 4 V
195 pF @ 10 V
±10V
-
500mW (Ta)
126mOhm @ 1A, 4V
150°C
Surface Mount
UF6
6-SMD, Flat Leads
SSM3K131TU-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 6A UFM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 27.6mOhm @ 4A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
paquet: -
Stock68 217
MOSFET (Metal Oxide)
30 V
6A (Ta)
4.5V, 10V
2.5V @ 1mA
10.1 nC @ 10 V
450 pF @ 15 V
±20V
-
500mW (Ta)
27.6mOhm @ 4A, 10V
150°C
Surface Mount
UFM
3-SMD, Flat Leads
TK1R5R04PB-LXGQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 160A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 205W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK+
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
paquet: -
Stock5 937
MOSFET (Metal Oxide)
40 V
160A (Ta)
6V, 10V
3V @ 500µA
103 nC @ 10 V
5500 pF @ 10 V
±20V
-
205W (Tc)
1.5mOhm @ 80A, 10V
175°C
Surface Mount
D2PAK+
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TPN19008QM-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 80V 34A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 630mW (Ta), 57W (Tc)
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 17A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock32 214
MOSFET (Metal Oxide)
80 V
34A (Tc)
6V, 10V
3.5V @ 200µA
16 nC @ 10 V
1400 pF @ 40 V
±20V
-
630mW (Ta), 57W (Tc)
19mOhm @ 17A, 10V
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
SSM3K376R-LF
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 4A SOT23F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
  • Vgs (Max): +12V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23F
  • Package / Case: SOT-23-3 Flat Leads
paquet: -
Stock13 995
MOSFET (Metal Oxide)
30 V
4A (Ta)
1.8V, 4.5V
1V @ 1mA
2.2 nC @ 4.5 V
200 pF @ 10 V
+12V, -8V
-
2W (Ta)
56mOhm @ 2A, 4.5V
150°C
Surface Mount
SOT-23F
SOT-23-3 Flat Leads
TPN5R203PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 38A 8TSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 610mW (Ta), 61W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 19A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock65 127
MOSFET (Metal Oxide)
30 V
38A (Tc)
4.5V, 10V
2.1V @ 200µA
22 nC @ 10 V
1975 pF @ 15 V
±20V
-
610mW (Ta), 61W (Tc)
5.2mOhm @ 19A, 10V
175°C
Surface Mount
8-TSON Advance (3.1x3.1)
8-PowerVDFN
TK110Z65Z-S1F
Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR TO-247-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.02mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(T)
  • Package / Case: TO-247-4
paquet: -
Stock21
MOSFET (Metal Oxide)
650 V
24A (Ta)
10V
4V @ 1.02mA
40 nC @ 10 V
2250 pF @ 300 V
±30V
-
190W (Tc)
110mOhm @ 12A, 10V
150°C
Through Hole
TO-247-4L(T)
TO-247-4
XPN9R614MC-L1XHQ
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 40A 8TSON

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
  • Vgs (Max): +10V, -20V
  • FET Feature: -
  • Power Dissipation (Max): 840mW (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock39 813
MOSFET (Metal Oxide)
40 V
40A (Ta)
4.5V, 10V
2.1V @ 500µA
64 nC @ 10 V
3000 pF @ 10 V
+10V, -20V
-
840mW (Ta), 100W (Tc)
9.6mOhm @ 20A, 10V
175°C
Surface Mount
8-TSON Advance-WF (3.1x3.1)
8-PowerVDFN
TK380A65Y-S4X
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 360µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock285
MOSFET (Metal Oxide)
650 V
9.7A (Tc)
10V
4V @ 360µA
20 nC @ 10 V
590 pF @ 300 V
±30V
-
30W (Tc)
380mOhm @ 4.9A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TPHR9203PL1-LQ
Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7540 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.92mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN
paquet: -
Stock56 901
MOSFET (Metal Oxide)
30 V
150A (Tc)
4.5V, 10V
2.1V @ 500µA
81 nC @ 10 V
7540 pF @ 15 V
±20V
-
960mW (Ta), 170W (Tc)
0.92mOhm @ 50A, 10V
175°C
Surface Mount
8-SOP Advance (5x5.75)
8-PowerTDFN
TK3P80E-RQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 80W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock5 517
MOSFET (Metal Oxide)
800 V
3A (Ta)
10V
4V @ 300µA
12 nC @ 10 V
500 pF @ 25 V
±30V
-
80W (Tc)
4.9Ohm @ 1.5A, 10V
150°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
XPW6R30ANB-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 100V 45A 8DSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DSOP Advance
  • Package / Case: 8-PowerVDFN
paquet: -
Stock2 286
MOSFET (Metal Oxide)
100 V
45A (Ta)
6V, 10V
3.5V @ 500µA
52 nC @ 10 V
3240 pF @ 10 V
±20V
-
960mW (Ta), 132W (Tc)
6.3mOhm @ 22.5A, 10V
175°C
Surface Mount
8-DSOP Advance
8-PowerVDFN
TPH6R004PL-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 87A/49A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 81W (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 24.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
paquet: -
Stock7 425
MOSFET (Metal Oxide)
40 V
49A (Tc)
4.5V, 10V
2.4V @ 200µA
30 nC @ 10 V
2700 pF @ 20 V
±20V
-
81W (Tc)
6mOhm @ 24.5A, 10V
175°C
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
TK125V65Z-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 24A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.02mA
  • Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
paquet: -
Stock15 000
MOSFET (Metal Oxide)
650 V
24A (Ta)
10V
4V @ 1.02mA
40 nC @ 10 V
2250 pF @ 300 V
±30V
-
190W (Tc)
125mOhm @ 12A, 10V
150°C
Surface Mount
4-DFN-EP (8x8)
4-VSFN Exposed Pad
SSM3J144TU-LF
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 3.2A UFM

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
  • Vgs (Max): +6V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Lead
paquet: -
Stock9 000
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.5V, 4.5V
1V @ 1mA
4.7 nC @ 4.5 V
290 pF @ 10 V
+6V, -8V
-
500mW (Ta)
93mOhm @ 1.5A, 4.5V
150°C
Surface Mount
UFM
3-SMD, Flat Lead
TK2R4A08QM-S4X
Toshiba Semiconductor and Storage

UMOS10 TO-220SIS 80V 2.4MOHM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 47W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock240
MOSFET (Metal Oxide)
80 V
100A (Tc)
6V, 10V
3.5V @ 2.2mA
179 nC @ 10 V
13000 pF @ 40 V
±20V
-
47W (Tc)
2.44mOhm @ 50A, 10V
175°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
TK065Z65Z-S1F
Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR TO-247-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.69mA
  • Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L(T)
  • Package / Case: TO-247-4
paquet: -
Stock75
MOSFET (Metal Oxide)
650 V
38A (Ta)
10V
4V @ 1.69mA
62 nC @ 10 V
3650 pF @ 300 V
±30V
-
270W (Tc)
65mOhm @ 19A, 10V
150°C
Through Hole
TO-247-4L(T)
TO-247-4
TK7R7P10PL-RQ
Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
paquet: -
Stock7 692
MOSFET (Metal Oxide)
100 V
55A (Tc)
4.5V, 10V
2.5V @ 500µA
44 nC @ 10 V
2800 pF @ 50 V
±20V
-
93W (Tc)
7.7mOhm @ 27.5A, 10V
175°C
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TK4A80E-S4X
Toshiba Semiconductor and Storage

PB-FPOWERMOSFETTRANSISTORTO-220S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
paquet: -
Stock120
MOSFET (Metal Oxide)
800 V
4A (Ta)
10V
4V @ 400µA
15 nC @ 10 V
650 pF @ 25 V
±30V
-
35W (Tc)
3.5Ohm @ 2A, 10V
150°C
Through Hole
TO-220SIS
TO-220-3 Full Pack
SSM3J65CTC-L3F
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 700MA CST3C

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 4.5V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3C
  • Package / Case: SC-101, SOT-883
paquet: -
Stock80 322
MOSFET (Metal Oxide)
20 V
700mA (Ta)
1.2V, 4.5V
1V @ 1mA
-
48 pF @ 10 V
±10V
-
500mW (Ta)
500mOhm @ 500mA, 4.5V
150°C
Surface Mount
CST3C
SC-101, SOT-883